18 Top Mosfet 600vs

 

VISHAY SILICONIX IRFBC40APBF N CHANNEL MOSFET 600V 62A TO-220 10 pieces

VISHAY SILICONIX IRFBC40APBF N CHANNEL MOSFET, 600V, 6.2A TO-220 (10 pieces)

VISHAY SILICONIX IRFBC40APBF N CHANNEL MOSFET, 600V, 6.2A TO-220 (10 pieces) - Vishay siliconix sihw47n60e-ge3 mosfet, n ch, 600v, 47a, to-247ad-3. Industrialfield 10pcs fqpf4n60c 4n60c fqpf4n60 mosfet 600v n-channel. If it is not delivered within the specified time, or if it is not satisfactory you only need to send a refund request and we will refund you in full. Developed countries estimated delivery time 7-17 days(trackable),other countries estimated delivery time 8-30 days—– we provide expedited shipping service 3-8 days(excluding handling time)if the order amount above us $200, we will use expedited shipping service for free.

 

MOSFET 600V 125mOhm10V 29A N-Ch E-SRS

MOSFET 600V [email protected] 29A N-Ch E-SRS

MOSFET 600V [email protected] 29A N-Ch E-SRS - Vishay siliconix sihf12n60e-e3 mosfet, n ch, 600v, 12a, to-220-3. Vishay siliconix sihg73n60e-ge3 mosfet, n ch, 600v, 73a, to-247ac-3. Vishay siliconix irfbc40spbf n channel mosfet, 600v, 62a d2-pak. Vishay siliconix sihg30n60e-ge3 mosfet, n ch, 600v, 29a, to-247ac-3.

 

Exiron 5pcs 4N60 FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW

Exiron 5pcs 4N60 FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW

Exiron 5pcs 4N60 FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW - Vishay siliconix irfbc40apbf n channel mosfet, 600v, 62a to-220. Vishay siliconix sihg73n60e-ge3 mosfet, n ch, 600v, 73a, to-247ac-3. Fairchild semiconductor fcp20n60 n channel mosfet, 600v, 20a, to-220. 5pcs 4n60 fqpf4n60 4n60 n-channel mosfet 600v to-220f new.

 

MOSFET 600V 50A 0145Ohm PolarP3 Power MOSFET Pack of 10 IXFH50N60P3

MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET Pack of 10 (IXFH50N60P3)

MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET Pack of 10 (IXFH50N60P3) - Package / case to-247-3 number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 50 a rds on, drain-source resistance 145 mohms vgs th, gate-source threshold voltage 5 v vgs, gate-source voltage 30 v qg, gate charge 94 nc pd, power dissipation 1040 w configuration single tradename hyperfet packaging tube transistor type 1 n-channel brand ixys forward transconductance, min 55 s fall time 17 ns product type mosfet rise time 20 ns factory pack quantity 30 subcategory mosfets unit weight 0. 056438 oz.

 

MOSFET 600V N-CHAN SupreMOS Pack of 10 FCP25N60N-F102

MOSFET 600V N-CHAN SupreMOS Pack of 10 (FCP25N60N-F102)

MOSFET 600V N-CHAN SupreMOS Pack of 10 (FCP25N60N-F102) - 7 mm brand on semiconductor / fairchild product type mosfet factory pack quantity 800 subcategory mosfets part # aliases fcp25n60n_f102 unit weight 0. 3 mm length 10. Package / case to-220-3 number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 25 a rds on, drain-source resistance 107 mohms pd, power dissipation 216 w configuration single packaging tube height 16. 67 mm transistor type 1 n-channel width 4. 063493 oz.

 

FQA19N60 - N-Channel QFET MOSFET 600V 185A 380 m8486

FQA19N60 – N-Channel QFET MOSFET 600V 18.5A 380 m8486;

FQA19N60 – N-Channel QFET MOSFET 600V 18.5A 380 m8486; - Vishay siliconix irfbc40apbf n channel mosfet, 600v, 62a to-220. 5pcs 4n60 fqpf4n60 4n60 n-channel mosfet 600v to-220f new. 50pcs 4n60 fqpf4n60 4n60 n-channel mosfet 600v to-220f new. Vishay siliconix sihg73n60e-ge3 mosfet, n ch, 600v, 73a, to-247ac-3.

 

MOSFET 600V VDS 30V VGS PowerPAK 8 x 8 - Pack of 10 SIHH180N60E-T1-GE3

MOSFET 600V VDS 30V VGS PowerPAK 8 x 8 – Pack of 10 (SIHH180N60E-T1-GE3)

MOSFET 600V VDS 30V VGS PowerPAK 8 x 8 – Pack of 10 (SIHH180N60E-T1-GE3) - 3 s fall time 23 ns product type mosfet rise time 49 ns factory pack quantity 3000 subcategory mosfets typical turn-off delay time 22 ns typical turn-on delay time 14 ns. Number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 19 a rds on, drain-source resistance 180 mohms vgs th, gate-source threshold voltage 3 v vgs, gate-source voltage 30 v qg, gate charge 33 nc minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 114 w configuration single channel mode enhancement packaging cut tape packaging mousereel packaging reel transistor type 1 n-channel e-series power mosfet brand vishay / siliconix forward transconductance, min 5.

 

Aexit IRFBC30 N Interfaces Channel Mosfet 600V 36A TO-220 22 Radio Frequency Transceivers Oh Transistor

Aexit IRFBC30 N Interfaces Channel Mosfet 600V 3.6A TO-220 2.2 Radio Frequency Transceivers Oh Transistor

Aexit IRFBC30 N Interfaces Channel Mosfet 600V 3.6A TO-220 2.2 Radio Frequency Transceivers Oh Transistor - Pin quantity 3drain source voltage 600vdrain current 36a. Package type to-220resistance 22ohm. Mounting hole diameter 36mm/ 014″total size 29x 10 x 4mm/11″ x 039″ x 016″ (lwh). Product name mosfetmodel no irf bc30channel type p-channel. Weight 3gpackage 1 x n-channel power mosfet.

 

MOSFET 600V Vds 30V Vgs TO-247AC Pack of 10 SIHG25N60EFL-GE3

MOSFET 600V Vds 30V Vgs TO-247AC Pack of 10 (SIHG25N60EFL-GE3)

MOSFET 600V Vds 30V Vgs TO-247AC Pack of 10 (SIHG25N60EFL-GE3) - Features package / case to-247ac-3 packaging tube brand vishay / siliconix product type mosfet factory pack quantity 500 subcategory mosfets.

 

MOSFET 600V N-Channel MOSFET Pack of 100 FCU5N60TU

MOSFET 600V N-Channel MOSFET, Pack of 100 (FCU5N60TU)

MOSFET 600V N-Channel MOSFET, Pack of 100 (FCU5N60TU) - 8 s fall time 22 ns product type mosfet rise time 40 ns factory pack quantity 5040 subcategory mosfets typical turn-off delay time 47 ns typical turn-on delay time 12 ns unit weight 0. 012102 oz. 7 mm brand on semiconductor / fairchild forward transconductance, min 3. Package / case to-220-3 number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 4. 67 mm transistor type 1 n-channel width 4. 3 mm length 10. 6 a rds on, drain-source resistance 810 mohms vgs, gate-source voltage 30 v minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 54 w configuration single channel mode enhancement packaging tube height 16.

 

MOSFET 600V NChannel MOSFET SupreMOS - Pack of 10 FCP36N60N

MOSFET 600V NChannel MOSFET SupreMOS – Pack of 10 (FCP36N60N)

MOSFET 600V NChannel MOSFET SupreMOS – Pack of 10 (FCP36N60N) - 3 mm length 10. 67 mm transistor type 1 n-channel width 4. Number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 36 a rds on, drain-source resistance 90 mohms vgs th, gate-source threshold voltage 4 v vgs, gate-source voltage 30 v qg, gate charge 86 nc minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 312 w configuration single tradename supremos packaging tube height 16. 7 mm brand on semiconductor / fairchild forward transconductance, min 41 s fall time 4 ns product type mosfet rise time 22 ns factory pack quantity 1000 subcategory mosfets typical turn-off delay time 94 ns typical turn-on delay time 23 ns unit weight 0. 085398 oz.

 

5PCS AOTF11S60 TF11S60 F11S60 MOSFET 600V N-CH MOSFET 11A TO-220F

5PCS AOTF11S60 TF11S60 F11S60 MOSFET, 600V N-CH MOSFET 11A TO-220F

5PCS AOTF11S60 TF11S60 F11S60 MOSFET, 600V N-CH MOSFET 11A TO-220F - If it is not delivered within the specified time, or if it is not satisfactory you only need to send a refund request and we will refund you in full. We make every effort to provide customers with satisfactory serviceany question,please feel free to contact me. 5pcs aotf11s60 tf11s60 f11s60 mosfet, 600v n-ch mosfet 11a to-220f. Usa estimated delivery time 7-18 days(trackable),other countries expect delivery time 8-25 days—– we provide expedited shipping service 3-8 days(excluding handling time)if the order amount above us $200, we will use expedited shipping service for free. You can search keywords in our store i believe you can find the product you need.

 

MOSFET 600V Vds 30V Vgs D2PAK TO-263 Pack of 10 SIHB35N60E-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263) Pack of 10 (SIHB35N60E-GE3)

MOSFET 600V Vds 30V Vgs D2PAK (TO-263) Pack of 10 (SIHB35N60E-GE3) - Features package / case to-263-3 number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 32 a rds on, drain-source resistance 82 mohms vgs th, gate-source threshold voltage 4 v vgs, gate-source voltage 30 v qg, gate charge 88 nc minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 250 w configuration single channel mode enhancement packaging tube brand vishay / siliconix fall time 32 ns product type mosfet rise time 61 ns factory pack quantity 1000 subcategory mosfets typical turn-off delay time 78 ns typical turn-on delay time 29 ns unit weight 0. 077603 oz.

 

VISHAY SILICONIX IRFPC50APBF N Channel MOSFET 600V 11A TO-247

VISHAY SILICONIX IRFPC50APBF N Channel MOSFET, 600V, 11A, TO-247

VISHAY SILICONIX IRFPC50APBF N Channel MOSFET, 600V, 11A, TO-247 - Vishay siliconix sihw47n60e-ge3 mosfet, n ch, 600v, 47a, to-247ad-3. Industrialfield 10pcs fqpf4n60c 4n60c fqpf4n60 mosfet 600v n-channel. Vishay siliconix irfpc50apbf n channel mosfet, 600v, 11a, to-247. If it is not delivered within the specified time, or if it is not satisfactory you only need to send a refund request and we will refund you in full.

 

10pcs FQPF6N60C 6N60C 6N60 MOSFET 600V 6A N-Channel Transistor TO-220F New Original

10pcs FQPF6N60C 6N60C 6N60 MOSFET 600V 6A N-Channel Transistor TO-220F New Original

10pcs FQPF6N60C 6N60C 6N60 MOSFET 600V 6A N-Channel Transistor TO-220F New Original - We will test the product before shippingestimated delivery time 6-24 days(trackable)—– we provide expedited shipping service 2-7 days(excluding handling time)if the order amount above us $120, we will use expedited shipping service for free. The item is good quality package reference weightweight0022kg (005lb). We make every effort to provide customers with satisfactory serviceany question,please feel free to contact me. We are a professional distributor of electronic components we also sell other kinds of products just search the model number in our store.

 

MOSFET 600V VDS 30V VGS TO-220 FULLPAK - Pack of 10 SIHA30N60AEL-GE3

MOSFET 600V VDS 30V VGS TO-220 FULLPAK – Pack of 10 (SIHA30N60AEL-GE3)

MOSFET 600V VDS 30V VGS TO-220 FULLPAK – Pack of 10 (SIHA30N60AEL-GE3) - Number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 28 a rds on, drain-source resistance 120 mohms vgs th, gate-source threshold voltage 2 v vgs, gate-source voltage 30 v qg, gate charge 120 nc minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 39 w configuration single channel mode enhancement brand vishay / siliconix forward transconductance, min 19 s fall time 33 ns product type mosfet rise time 24 ns factory pack quantity 1 subcategory mosfets typical turn-off delay time 79 ns typical turn-on delay time 26 ns.

 

MOSFET 600V N-Channel SuperFET Pack of 10 FCPF7N60

MOSFET 600V N-Channel SuperFET Pack of 10 (FCPF7N60)

MOSFET 600V N-Channel SuperFET Pack of 10 (FCPF7N60) - Package / case to-220fp-3 number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 7 a rds on, drain-source resistance 530 mohms vgs, gate-source voltage 30 v minimum operating temperature, 55 c maximum operating temperature 150 c pd, power dissipation 31 w configuration single channel mode enhancement tradename superfet packaging tube height 16. 07 mm length 10. 080072 oz. 9 mm brand on semiconductor / fairchild forward transconductance, min 6 s fall time 32 ns product type mosfet rise time 55 ns factory pack quantity 1000 subcategory mosfets typical turn-off delay time 75 ns typical turn-on delay time 35 ns unit weight 0. 36 mm transistor type 1 n-channel type mosfet width 4.

 

MOSFET 600V 14A - Pack of 10 IXFH14N60P

MOSFET 600V 14A – Pack of 10 (IXFH14N60P)

MOSFET 600V 14A – Pack of 10 (IXFH14N60P) - 3 mm brand ixys forward transconductance, min 13 s fall time 26 ns product type mosfet rise time 27 ns factory pack quantity 30 subcategory mosfets typical turn-off delay time 70 ns typical turn-on delay time 23 ns unit weight 0. Number of channels 1 channel transistor polarity n-channel vds, drain-source breakdown voltage 600 v id, continuous drain current 14 a rds on, drain-source resistance 550 mohms vgs, gate-source voltage 30 v minimum operating temperature, 55 c maximum operating temperature + 150 c pd, power dissipation 300 w configuration single channel mode enhancement tradename hyperfet packaging tube height 21. 26 mm transistor type 1 n-channel width 5. 229281 oz. 46 mm length 16.





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